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課程資訊 |
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課程名稱 |
自旋電子學導論 Introduction to Spintronics | ||||||||||||||||
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開課學期 |
104-2 | ||||||||||||||||
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授課對象 |
理學院 物理學研究所 | ||||||||||||||||
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授課教師 |
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課號 |
ApPhys7004 | ||||||||||||||||
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課程識別碼 |
245 M0070 | ||||||||||||||||
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班次 |
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學分 |
3 | ||||||||||||||||
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全/半年 |
半年 | ||||||||||||||||
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必/選修 |
選修 | ||||||||||||||||
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上課時間 |
星期三7,8,9(14:20~17:20) | ||||||||||||||||
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上課地點 |
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備註 |
總人數上限：30人 | ||||||||||||||||
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Ceiba 課程網頁 |
http://ceiba.ntu.edu.tw/1042ApPhys7004_ | ||||||||||||||||
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課程簡介影片 |
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核心能力關聯 |
核心能力與課程規劃關聯圖 | ||||||||||||||||
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課程大綱
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課程概述 |
待補 | ||||||||||||||||
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課程目標 |
˙學會基本磁性與材料特性，並進而結合電子學知識，利用現代自旋電子學特色，創造新一代的自旋電子元件
˙培養新世代的電子元件的世界人才，提升台灣在新世紀的競爭力 | ||||||||||||||||
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課程要求 |
有基本電磁學，物理學，電子學訓練
Team Project and homework will be evaluted. No mid-term or final test. |
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預期每週課後學習時數 |
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Office Hours |
每週三 10:00~12:00 備註： 每週三 10:00~12:00 請來凝態物理大樓，辦公室在7樓 R726，最好事前預約 | ||||||||||||||||
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指定閱讀 |
各種自旋電子元件的最新研發成果 | ||||||||||||||||
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參考書目 |
Magnetism and magnetic materials, J.M. D. Coey
Magnetic memory, D. D. Tang & Y. J. Lee Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change, HaiLi & YiranChen | ||||||||||||||||
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評量方式 (僅供參考) |
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課程進度 |
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週次 |
日期 |
單元主題 |
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第1週 |
2/24 | Course Introduction History and Background Advances in magnetism in late the 20thCentury New magnetic devices |
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第2週 |
3/02 | Basic Electronmagnetism Introduction; Magnetic force; poles and fields; Magnetic dipoles; Ampere's circuital Law; Biot-Savart Law; Magnetic moments Magnetic dipolar energy; Magnetic Flux; Magnetic Induction; Classical Maxwell equations of electomagnetism; Inductance |
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第3週 |
3/09 | Magnetism and magnetic material (I) Origin of magnetism (spin; orbital; spin-orbit coupling); Introduction of magnetic materials (dia-; para-; ferro; anti-ferro; ferri-magnet); Ferromagnet/antiferromagnet bilayer structure; Interlayer exchnage coupling in ferromagnet/metal/ferromagnet multilayer (RKKY interaction; Neel coupling); |
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第4週 |
3/16 | Magnetism and magnetic material (II) Anisotropy energy: (Crystalline; interface/surface; Exchange energy; Zeeman energy) In-plane film and perpendicular film; Magnetization Dynamics (precession); |
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第5週 |
3/23 | Properties of Magnetic nano-structures Edge pole and demagnetizing field; magnetic domains, domain wall, curling, vortex, C/S-state; magnetization behavior under an external field; Stoner-Walfarth model; Switching behavior, switching threshold field; magnetization behavior of a synthetic anti-ferromagnetic film stack |
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第6週 |
3/30 | Magneto-resistance effects Hall effects; AMR; GMR; TMR, MTJ; |
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第7週 |
4/06 | Field-write mode MRAM Field MTJ RAM cell; read signal; write bit cell with magnetic field; Astroid-mode MRAM; Toggle-mode MRAM; Characterization method of MRAM chip write performance; Thermally assisted field write; Multi-transistor cells |
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第8週 |
4/13 | Magnetization dynamics, spin-magnetization interactions Magnetization dynamics, LLG equation; Ferromagnetic resonance; Interaction between polarized free electrons and Magnetization Macrospin model; Spin-torque Transfer properties of spin valve; Spin-torque Transfer properties of MTJ; Spin current, spin pumping, accumulation, and effective damping |
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第9週 |
4/20 | Spin-torque transfer mode MRAM (I) Spin transfer mode MRAM cell; Spin-transfer torque and switching threshold current density; Stochastic property of magnetic switching; Abnormal switching behavior; Tunnel barrier reliability; |
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第10週 |
4/27 | Spin-torque transfer mode MRAM (II) Circuit model; memory cell operation; read-write operation window; Data retention; Thermal stability of STT memory chip; |
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第11週 |
5/04 | Other switching modes MRAM Current-driven domain wall motion mode –physics, devices VCAM mode –physics, application to memory devices Precession mode -physics, devices Spin Hall effect mode – physics, devices |
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第12週 |
5/11 | Apparatus principles; memory chip design, statistics, error handling Film/memory device characterization and apparatus Apparatus principles; VSM – working principle MOKE – working principle CIPT – working principle TDDB; Data retention; memory chip design; statistics; error handling |
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第13週 |
5/18 | Magnetoresistive sensor Introduction to theory Hall effect AMR GMR TMR Schematic & circuitry: GMR as an example Microfabrication Applications |
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第14週 |
5/25 | Applications of magnetic tunnel junction technology Memory landscape; standalone memory; Embedded in CMOS SoC; Endurance vs data retention requirement In TCAM, FPGA, other embedded applications Chip power management; Nv Logic; RF oscillator (ST) |
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第15週 |
6/01 | HDD, Spin-FET, Hall/Spin Hall devices/RF oscillator/logic elements Hard Disk Drive HDD, evolution; Recording medium; Sensors and write head; Electronics; Mn:GaAs Logic devices RF oscillator (ST) |
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第16週 |
6/08 | break: team design projects |
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第17週 |
6/15 | Students Projects Presentation, team leader report |